• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Disclosed are a cleaning force measurement sample capable of determining the characteristics of a cleaning agent and a method of manufacturing the same. A gate insulating film is formed on the upper surface of the gate electrode, the surface of the gate insulating film is cleaned with a cleaning agent, and then a channel layer is formed on the surface of the gate insulating film. A source electrode and a drain electrode are formed on the upper surface of the channel layer with mercury, which is a fluid metal. A gate voltage is applied to the gate electrode and a test voltage is applied to the source electrode so that current flows from the source to the drain. Taking into account that the characteristic of the cleaning agent is improved as the amount of current increases, the cleaning power of the cleaning agent is measured. This greatly shortens the preparation process of the sample required to measure the cleaning power of the cleaning agent, and allows the unique characteristics of the cleaning agent to be accurately determined.
    公开号:KR20040061670A
    申请号:KR1020020087955
    申请日:2002-12-31
    公开日:2004-07-07
    发明作者:박애나；강성철；박홍식；조홍제；박봉욱
    申请人:삼성전자주식회사；
    IPC主号:
    专利说明:

    Cleaning force measuring sample and measuring method thereof {SAMPLE AND METHOD FOR MEASURING DETERGENCY OF DETERGENT}
    [10] The present invention relates to a cleaning force measurement sample and a measuring method thereof, and more particularly, to a cleaning force measurement sample and a measuring method thereof capable of measuring the cleaning power of the cleaning agent.
    [11] In general, a liquid crystal display device is one of flat panel displays that display characters, images, and moving images with liquid crystals.
    [12] Liquid crystal display is a process of forming an LCD unit cell on two glass substrates, a process of forming an LCD panel by cutting an LCD unit cell from a glass substrate, a process of manufacturing an LCD panel assembly by assembling a drive module on an LCD panel, and an LCD. It consists of the process of assembling the case to the panel assembly.
    [13] The process of forming the LCD unit cell in the process of manufacturing the liquid crystal display device includes a very precise thin film manufacturing process. For example, the process of forming an LCD unit cell includes a process of manufacturing a thin film transistor on a glass substrate.
    [14] The thin film transistor includes a plurality of patterned thin films, such as a gate electrode, a gate line, a gate insulating film, a channel layer, a source electrode, and a drain electrode. Since the precisely patterned thin film transistor has a very small size, a wide variety of process defects are generated by fine particles or foreign matters. For example, a liquid crystal display device is composed of millions of thin film transistors, and even if only a few to several tens of thin film transistors are not operated, the liquid crystal display device cannot be commercialized.
    [15] At this time, the characteristics of the channel layer are changed sensitively to particles or foreign matter. In the channel layer, a channel, which is an electron path, is formed by a voltage applied to the gate electrode. At this time, the foreign matter or particles included in the channel layer is combined with the electrons of the channel layer to change the amount of current and voltage intensity passing through the channel layer. If the amount of current passing through the channel layer and the intensity of the voltage are different, the displayed image is distorted.
    [16] Recently, various cleaning agents have been developed to remove particles or foreign substances from the channel layer in order to prevent such display defects. In order to test the performance of the cleaners or to improve the performance of the cleaners, a method of manufacturing a liquid crystal display panel and then testing the test substrate is mainly used.
    [17] However, such a method has a problem that it is difficult to accurately recognize the characteristics of the cleaning agent due to many factors affecting the quality of the image other than the characteristics of the cleaning agent, and takes a long time for testing.
    [18] Accordingly, the present invention has been made in view of such a conventional problem, and a first object of the present invention is to provide a cleansing force measurement sample capable of simply measuring the characteristics of a cleaning agent for removing particles or foreign substances.
    [19] Moreover, the 2nd objective of this invention is providing the manufacturing method of the cleaning force measurement sample which can easily measure the characteristic of the cleaning agent which removes a particle or a foreign material.
    [1] 1 is a cross-sectional view showing the configuration of a cleaning force measurement sample according to a first embodiment of the present invention.
    [2] 2 is a plan view illustrating a source electrode and a drain electrode according to the first embodiment of the present invention.
    [3] 3 is a cross-sectional view showing a cleaning force measurement sample according to a second embodiment of the present invention.
    [4] 4A is a flowchart illustrating a gate electrode of a cleaning force measurement sample according to an embodiment of the present invention.
    [5] 4B is a flowchart illustrating a gate insulating film formed on an upper surface of a gate electrode according to an exemplary embodiment of the present invention.
    [6] 4C is a flowchart illustrating cleaning the surface of the gate insulating layer according to an exemplary embodiment of the present invention.
    [7] 4D is a process diagram illustrating the formation of a channel layer on the surface of a gate insulating film according to an exemplary embodiment of the present invention.
    [8] 4E is a flowchart illustrating a source electrode and a drain electrode on an upper surface of a channel layer according to an embodiment of the present invention.
    [9] 5 is a conceptual diagram illustrating that test power is applied to a cleaning force measurement sample according to an embodiment of the present invention.
    [20] The cleaning force measurement sample for implementing the first object of the present invention is disposed on the gate electrode formed on the base substrate, the gate electrode, the gate insulating film whose surface is cleaned by the cleaning agent, the channel layer formed on the gate insulating film and the cleaning agent In order to measure the interfacial properties between the channel layers, the gate insulating film is provided, and a cleaning force measurement sample including a mercury source electrode and a mercury source electrode spaced apart from the mercury source electrode is provided.
    [21] In addition, the method for manufacturing a cleaning force measurement sample for implementing the second object of the present invention is to form a gate electrode on the base substrate, a gate insulating film formed on the upper surface of the gate electrode, cleaning the upper surface of the gate insulating film with a cleaning agent and the gate After the channel layer is formed on the upper surface of the insulating film, a mercury source electrode and a mercury drain electrode spaced apart from the mercury source electrode are formed on the upper surface of the channel layer, and the interface property between the gate insulating film and the channel layer cleaned by the cleaning agent is measured. In order to provide a cleaning force measuring method for forming a channel in a channel layer and applying a test power supply to a source electrode, the current output to the drain electrode is measured.
    [22] According to the present invention, it is possible to greatly shorten the manufacturing process of the sample for measuring the cleaning power of the cleaning agent, and to determine the cleaning characteristics of the cleaning agent by measuring the cleaning power only by the parameters in the process of cleaning with the cleaning agent.
    [23] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    [24] 1 is a cross-sectional view showing the configuration of a cleaning force measurement sample according to a first embodiment of the present invention.
    [25] Referring to FIG. 1, the cleaning force measurement sample 100 is again returned to the base substrate 10, the gate electrode 20, the gate insulating film 30, the channel layer 40, the source electrode 50, and the drain electrode 60. It is composed.
    [26] The gate electrode 20 is formed on the base substrate 10. Preferably, the gate electrode 20 is made of single crystal silicon doped with metal or ions. The gate electrode 20 may use any conductor other than metal or ion-doped single crystal silicon. In one embodiment of the present invention, ion-doped single crystal silicon is used.
    [27] The gate insulating film 30 is formed on the upper surface of the gate electrode 20. The gate insulating layer 30 is, in one embodiment, silicon oxide (SiO 2 ) that insulates the gate electrode 20, and has a thickness of 2000 ± 200 μs. The gate insulating layer 30 is formed by a chemical vapor deposition process, a diffusion process, or the like. The gate insulating film 30 may use a nitride film NiO x in addition to silicon oxide.
    [28] In this case, various foreign substances or particles are present on the upper surface of the gate insulating layer 30, and the foreign substances or particles are cleaned by a cleaner.
    [29] The channel layer 40 is formed on the top surface of the gate insulating film 30. The channel layer 40 is an amorphous silicon thin film (amorphous silicon) or polycrystalline silicon (poly silicon) is used as a preferred embodiment. In a preferred embodiment of the present invention, a polycrystalline silicon thin film is used as the channel layer 40.
    [30] In this case, the polycrystalline silicon thin film used as the channel layer 40 is formed on the upper surface of the gate insulating film 30 using an amorphous silicon thin film that can be deposited at a low temperature. Specifically, the amorphous silicon thin film is crystallized by an excimer laser, and the amorphous silicon thin film is changed into a polycrystalline silicon thin film.
    [31] 2 is a plan view illustrating a source electrode and a drain electrode according to the first embodiment of the present invention.
    [32] Referring to FIG. 2, the source electrode 50 is disposed on the top surface of the channel layer 40 in one embodiment. The source electrode 50 is made of mercury in one embodiment. The source electrode 50 made of mercury greatly simplifies the process of forming the source electrode 50. The source electrode 50 is formed in a dot shape in one embodiment.
    [33] The drain electrode 60 is disposed on the top surface of the channel layer 40 in one embodiment. The drain electrode 60 is made of mercury in one embodiment. The drain electrode 60 made of mercury greatly simplifies the process of forming the drain electrode 60. The drain electrode 60 is formed in a shape surrounding the source electrode 50 in one embodiment.
    [34] At this time, mercury is fluid, so that the source electrode 50 and the drain electrode 60 are not shorted.
    [35] 3 is a cross-sectional view showing a cleaning force measurement sample according to a second embodiment of the present invention.
    [36] Referring to FIG. 3, the cleaning force measurement sample 200 includes a base substrate 210, a gate electrode 220, a gate insulating film 230, an etching layer 235, a channel layer 240, a source electrode 250, and a drain. It consists of an electrode 260.
    [37] The gate electrode 220 is formed on the base substrate 210. Preferably, the gate electrode 220 is made of single crystal silicon doped with metal or ions. The gate electrode 220 may use any conductor other than metal or ion-doped single crystal silicon. In one embodiment of the present invention, ion-doped single crystal silicon is used.
    [38] The gate insulating layer 230 is formed on the top surface of the gate electrode 220. In one embodiment, the gate insulating layer 230 is silicon oxide (SiO 2 ) insulating the gate electrode 220, and has a thickness of 2000 ± 200 μs. The gate insulating layer 220 is formed by a chemical vapor deposition (Chemical Vapored Deposition) process or a diffusion process. The gate insulating film 220 may use a nitride film NiO x in addition to silicon oxide.
    [39] The etching layer 235 is a pattern formed by depositing a predetermined pattern, for example, an n + amorphous silicon layer on the top surface of the gate insulating layer 230, and then etching the same. An etching layer 235 is formed to test the cleaning power of the cleaning agent on the etched thin film surface.
    [40] In this case, various foreign substances or particles are present on the upper surface of the etching layer 235, and the foreign substances or particles are cleaned by a cleaner.
    [41] The channel layer 240 is formed on the top surface of the etching layer 235. In an exemplary embodiment, the channel layer 240 may be formed of an amorphous silicon thin film or polycrystalline silicon thin film. In a preferred embodiment of the present invention, a polycrystalline silicon thin film is formed.
    [42] In this case, an amorphous silicon thin film capable of depositing at a low temperature on the upper surface of the gate insulating layer 230 is used as the channel layer 240. The amorphous silicon thin film is crystallized by an excimer laser to change the crystal structure of the amorphous silicon thin film.
    [43] The source electrode 250 is disposed on the top surface of the channel layer 240 in one embodiment. The source electrode 250 is made of mercury in one embodiment. The source electrode 250 made of mercury greatly simplifies the process of forming the source electrode 250. The source electrode 250 is formed in a dot shape in one embodiment.
    [44] The drain electrode 260 is disposed on the top surface of the channel layer 240 in one embodiment. The drain electrode 260 is made of mercury in one embodiment. The drain electrode 260 made of mercury greatly simplifies the process of forming the drain electrode 260. In an embodiment, the drain electrode 260 is formed in a horseshoe shape and is formed in a shape surrounding the source electrode 250.
    [45] At this time, since the mercury is fluid, the source electrode 250 and the drain electrode 260 are not shorted to each other.
    [46] Hereinafter, a process of preparing a cleaning force measurement sample will be described with reference to FIGS. 1 and 4A to 4E.
    [47] 4A is a flowchart illustrating a gate electrode of a cleaning force measurement sample according to an embodiment of the present invention.
    [48] Referring to FIG. 4A, a gate electrode 20 is formed on the base substrate 10. In one embodiment, the gate electrode 20 is a single crystal silicon doped with metal or ions. In the present invention, preferably, single crystal silicon doped with ions is deposited on the gate electrode 20.
    [49] 4B is a flowchart illustrating a gate insulating film formed on an upper surface of a gate electrode according to an exemplary embodiment of the present invention.
    [50] Referring to FIG. 4B, a gate insulating layer 30 is formed on the top surface of the gate electrode 20. The gate insulating film 30 is an oxide film (SiO 2 ) or a nitride film (NiO x ) formed by a chemical vapor deposition process. At this time, the oxide film or nitride film is formed on the surface of the gate electrode 20 to a thickness of about 2000 ± 200 Å.
    [51] 4C is a flowchart illustrating cleaning the surface of the gate insulating layer according to an exemplary embodiment of the present invention.
    [52] Referring to FIG. 4C, the cleaning bath 75 including the cleaning agent is supplied to the cleaning bath 70, and the base substrate 10 having the gate insulating film 30 is contained in the cleaning solution 75. Particles and foreign matter adhering to the surface of the gate insulating film 30 are cleaned by the cleaning liquid 75 including the cleaning agent. At this time, various kinds of cleaning agents may be used.
    [53] 4D is a process diagram illustrating the formation of a channel layer on the surface of a gate insulating film according to an exemplary embodiment of the present invention.
    [54] Referring to FIG. 4D, after the gate insulating film 30 is cleaned and the gate insulating film 30 is dried, the channel layer 40 is formed on the surface of the gate insulating film 30. An amorphous silicon thin film or a polycrystalline silicon thin film is used for the channel layer 40. Preferably, the channel layer 40 used in the present invention is a polycrystalline silicon thin film.
    [55] In order to form the channel layer 40, first, an amorphous silicon thin film 45 is formed on the surface of the gate insulating film 30 to a thickness of 500 ± 50 Å. The amorphous silicon thin film 45 is formed by a chemical vapor deposition process. The excimer laser beam 48 is scanned again by the excimer laser beam generator 49 on the amorphous silicon thin film 45 formed on the gate insulating film 30. The excimer laser beam 48 converts the amorphous silicon thin film 45 into a polycrystalline silicon thin film.
    [56] 4E is a flowchart illustrating a source electrode and a drain electrode on an upper surface of a channel layer according to an embodiment of the present invention.
    [57] Referring to FIG. 4E, mercury is dropped on the upper surface of the channel layer 40 to form the source electrode 50 and the drain electrode 60. The source electrode 50 is dropped to the channel layer 40 in a dot shape, and the drain electrode 60 is formed in the channel layer 40 to surround the source electrode 50.
    [58] Hereinafter, a process of evaluating the performance of the cleaning agent with the cleaning force measurement sample will be described with reference to the accompanying drawings.
    [59] 5 is a conceptual diagram illustrating that test power is applied to a cleaning force measurement sample according to an embodiment of the present invention.
    [60] Referring to FIG. 5, the first test probe 25 to which the gate voltage is applied is contacted to the gate electrode 20, and the second test probe 55 to which the reference voltage is applied is contacted to the source electrode 50. A third test probe 65 for measuring a current output to the drain electrode 60 is contacted with the drain electrode 60.
    [61] At this time, the cleaning power measurement samples are used in all two types in one embodiment.
    [62] The cleaning force measurement sample is composed of the first cleaning force measurement sample without the etching layer and the second cleaning force measurement sample with the etching layer. In this case, the first cleaning force measurement sample and the second cleaning force measurement sample are not cleaned of the gate insulating film, the gate insulating film is cleaned with HF, the gate insulating film is cleaned with an organic material, and the gate insulating film is cleaned with pure water. The interface characteristics of the insulating film and the channel layer are measured. Interface properties are measured by current. This is summarized in <Table 1>.
    [63] Do not cleanHF CleaningOrganics CleaningPure cleaning 1st cleaning power measurement sample9.14 × 10 -10 1.5 × 10 -9 1.1 × 10 -9 1.3 × 10 -9Second cleaning force measurement sample7.8 × 10 -10 1.9 × 10 -9 9.7 × 10 -10 1.0 × 10 -9evaluationBadBestGreatGreat
    [64] In Table 1, the numerical value is amperes [A] output from the drain electrode.
    [65] According to Table 1, the amount of current in the measurement sample without cleaning the gate insulating film was relatively small. The small amount of current means that a large number of traps, ions, particles, and the like are attached to the interface between the gate insulating film and the channel layer.
    [66] On the other hand, the amount of current in the cleaning force measurement sample which cleaned the gate insulating film with HF increased significantly compared with the case without cleaning. This means that when the gate insulating film is cleaned with HF, most of the ions or particles on the surface of the gate insulating film are removed.
    [67] In addition, the amount of current in the cleaning force measurement sample in which the gate insulating film was cleaned with the organic material was increased rather than without cleaning, but was somewhat smaller than when cleaning with HF. In particular, when there is an etching layer between the gate insulating film and the channel layer, the amount of current is significantly reduced.
    [68] Finally, the amount of current in the cleaning force measurement sample which cleaned the gate insulating film with pure water showed almost the same amount of current as when the gate insulating film was cleaned with HF.
    [69] In this way, even when the concentration of HF is changed or when other additives are mixed with HF, the characteristics of the cleaning agent can be easily known as the amount of current.
    [70] Therefore, the characteristics of the cleaning agent can be determined only by forming the channel layer, the gate insulating film, the cleaning and the channel layer on the base substrate, and then forming the drain electrode and the source electrode with mercury.
    [71] As described in detail above, the characteristics of the cleaner are judged by changing the type of the cleaner or the components contained in the cleaner little by little to greatly shorten the time required for the development of the cleaner, and to accurately determine the characteristics of the cleaner.
    [72] In the detailed description of the present invention described above with reference to a preferred embodiment of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge in the scope of the invention described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.
    权利要求:
    Claims (8)
    [1" claim-type="Currently amended] A gate electrode formed on the base substrate;
    A gate insulating layer disposed on the gate electrode and whose surface is cleaned by a cleaning agent;
    A channel layer formed on the gate insulating film;
    A mercury source electrode formed on an upper surface of the channel layer to measure an interface property between the gate insulating layer and the channel layer; And
    And a mercury drain electrode spaced apart from the mercury source electrode and formed on the upper surface of the channel layer.
    [2" claim-type="Currently amended] The cleaning force measurement sample of claim 1, wherein the gate electrode is made of either metal or ion-doped single crystal silicon.
    [3" claim-type="Currently amended] The sample of claim 1, wherein the channel layer is made of a material selected from the group consisting of monocrystalline silicon, polycrystalline silicon, or amorphous silicon.
    [4" claim-type="Currently amended] The cleaning force measurement sample of claim 1, wherein the source electrode is formed in a dot shape, and the drain electrode is formed in a shape surrounding the source electrode.
    [5" claim-type="Currently amended] The sample of claim 1, wherein an etching layer is further formed between the gate insulating layer and the channel layer.
    [6" claim-type="Currently amended] The cleaning force measurement sample according to claim 5, wherein the etching layer is n + amorphous silicon thin film.
    [7" claim-type="Currently amended] Forming a gate electrode on the base substrate;
    Forming a gate insulating film on an upper surface of the gate electrode;
    Cleaning the upper surface of the gate insulating film with a cleaner;
    Forming a channel layer on an upper surface of the gate insulating film;
    Forming a mercury source electrode and a mercury drain electrode spaced apart from the mercury source electrode on an upper surface of the channel layer; And
    In order to measure the interface characteristics between the gate insulating layer and the channel layer, forming a channel in the channel layer and applying a test power to the source electrode to measure the current output to the drain electrode measuring method .
    [8" claim-type="Currently amended] The method of claim 7, wherein the forming of the gate insulating layer further comprises etching the surface of the gate insulating layer.
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    同族专利:
    公开号 | 公开日
    KR100926302B1|2009-11-12|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-12-31|Application filed by 삼성전자주식회사
    2002-12-31|Priority to KR1020020087955A
    2004-07-07|Publication of KR20040061670A
    2009-11-12|Application granted
    2009-11-12|Publication of KR100926302B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020020087955A|KR100926302B1|2002-12-31|2002-12-31|Sample and method for measuring detergency of detergent|
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